Schottky diode, also known as Schottky barrier diode, is a type of diode composed of a metal-semiconductor PN junction. It has a fast switching speed, lower forward voltage drop, and smaller reverse leakage current, making it suitable for various applications.
Unlike a traditional PN junction diode, Schottky diode utilizes a metal-semiconductor junction to form a barrier. When a forward voltage is applied to the diode, the electrons from the metal contact with the semiconductor, resulting in a low forward voltage drop. In the reverse bias mode, the metal-semiconductor junction forms a barrier, which prevents the flow of current until the reverse breakdown voltage is reached.
Schottky diodes have several advantages over traditional PN junction diodes, including:
Schottky diodes have a wide range of applications in various fields, including:
Schottky diode is a type of diode composed of a metal-semiconductor PN junction, which has a fast switching speed, lower forward voltage drop, and smaller reverse leakage current. It has a wide range of applications in low voltage circuits, high-frequency circuits, digital logic, solar cells, RF applications, and temperature sensing. It is believed that Schottky diodes will have even more extensive applications in the future development.